128 results on '"Jones, K.S."'
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2. Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts
3. Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors
4. Electrical activation of ion implanted Si in amorphous and crystalline In0.53Ga0.47As
5. Insights for void formation in ion-implanted Ge
6. Atomistic considerations of stressed epitaxial growth from the solid phase
7. Amorphization and graphitization of single-crystal diamond — A transmission electron microscopy study
8. Evaluation of the relationship between cathode microstructure and electrochemical behavior for SOFCs
9. Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon
10. Stressed solid-phase epitaxial growth of (011) Si
11. A stable isotope method for the simultaneous measurement of vitamin [K.sub.1] (phylloquinone) kinetics and absorption
12. Interaction of ion-implantation-induced interstitials in B-doped SiGe
13. Fluorine-enhanced boron diffusion in germanium-preamorphized silicon
14. Enhanced Boron Diffusion in Amorphous Silicon
15. Impact of the end of range damage from low energy Ge preamorphizing implants on the thermal stability of shallow boron profiles
16. HRXRD studies of strain relaxation in ion-implanted strained Si on relaxed Si1−xGex
17. Annealing kinetics of (311) defects and dislocation loops in the end-of-range damage region of ion implanted silicon
18. Oxide reduction during triggered-lightning fulgurite formation
19. Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si
20. Effect of the silicon/oxide interface on iterstitials: Di-interstitial recombination
21. Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices
22. Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi2 film
23. Extrinsic dislocation loop behavior in silicon with a thermally grown silicon nitride film
24. Effect of implant temperature on transient enhanced diffusion of boron in regrown silicon after amorphization by Si+ or Ge+ implantation
25. The effect of boron implant energy on transient enhanced diffusion in silicon
26. Carbon incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe on Si at 500-600 degrees Celsius
27. Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon
28. Kinetics of {3 1 1} defect dissolution in silicon-on-insulator (SOI)
29. Study of end of range loop interactions with B+ implant damage using a boron doped diffusion layer
30. Dislocations in lattice-mismatched wide-gap II-VI/GaAs heterostructures as laser light scatterers: experiment and theory
31. Transmission electron microscopy analysis of heavily As-doped, laser, and thermally annealed layers in silicon
32. Effect of implant temperature on dopant diffusion and defect morphology for Si implanted GaAs
33. Use of type II (end of range) damage as 'detectors' for quantifying interstitial fluxes in ion-implanted silicon
34. A study of point defect detectors created by Si and Ge implantation
35. Crater formation and sputtering by cluster impacts
36. Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts
37. Modeling two-dimensional solid-phase epitaxial regrowth using level set methods
38. Defect evolution of low energy, amorphizing germanium implants in silicon
39. Investigation of mechanisms of vacancy generation in silicon in the...
40. Craters on silicon surfaces created by gas cluster ion impacts
41. Degradation of sub-micron gate AlGaN/GaN HEMTs due to reverse gate bias.
42. Statistics and Retrieval: Past and Future.
43. Formation of ultrashallow junctions in 500 eV boron implanted silicon using nonmelt laser annealing.
44. Electrical activation of implanted single crystal germanium substrates.
45. Co-implantation of boron and fluorine in silicon.
46. A new model for {311} defects based on in situ measurements.
47. The role of fluorine on reducing TED in boron implanted silicon.
48. Boron diffusion upon annealing of laser thermal processed silicon.
49. Dopants, Defects, Clusters: A Process Modelling Taxonomy.
50. Transient enhanced diffusion and defect studies in B implanted Si.
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