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Study of end of range loop interactions with B+ implant damage using a boron doped diffusion layer
- Source :
- Journal of Applied Physics. August 15, 1995, Vol. 78 Issue 4, p2298, 5 p.
- Publication Year :
- 1995
- Subjects :
- Diffusion -- Usage
Dislocations in crystals -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 78
- Issue :
- 4
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.17499586