Use of type II (end of range) damage as 'detectors' for quantifying interstitial fluxes in ion-implanted silicon

The applicability of type II damage as detectors for the quantification of interstitial fluxes in ion-implanted silicon was investigated. The results showed that the concentration of interstitials bound by the type II dislocation loops increased as the B+ dose was increased. The net concentration of interstitials ranged from 7.0x10(super 13) to 1.8x10(super 14) per square centimeter. Completely formed loops were more efficient by more than 20%.