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Use of type II (end of range) damage as 'detectors' for quantifying interstitial fluxes in ion-implanted silicon
- Source :
- Journal of Applied Physics. May 15, 1993, Vol. 73 Issue 10, p4815, 5 p.
- Publication Year :
- 1993
-
Abstract
- The applicability of type II damage as detectors for the quantification of interstitial fluxes in ion-implanted silicon was investigated. The results showed that the concentration of interstitials bound by the type II dislocation loops increased as the B+ dose was increased. The net concentration of interstitials ranged from 7.0x10(super 13) to 1.8x10(super 14) per square centimeter. Completely formed loops were more efficient by more than 20%.
Details
- ISSN :
- 00218979
- Volume :
- 73
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.14239902