Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi2 film

The perturbance in the silicon vacancy concentration caused by the presence of TiSi2 films was examined using antimony silicon doping superlattices as a vacancy detector. An order of 1.5 relative vacancy supersaturation was observed in deposited titanium thickness 4-312 nm, 800-850-degrees celsius, 15-600 min. Vacancy injection mechanisms during titanium silicidation involve volume contraction and stress compensation.