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Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi2 film
- Source :
- Journal of Applied Physics. July 15, 1997, Vol. 82 Issue 2, p583, 6 p.
- Publication Year :
- 1997
-
Abstract
- The perturbance in the silicon vacancy concentration caused by the presence of TiSi2 films was examined using antimony silicon doping superlattices as a vacancy detector. An order of 1.5 relative vacancy supersaturation was observed in deposited titanium thickness 4-312 nm, 800-850-degrees celsius, 15-600 min. Vacancy injection mechanisms during titanium silicidation involve volume contraction and stress compensation.
- Subjects :
- Silicon -- Research
Perturbation (Quantum dynamics) -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 82
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.20213443