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Effect of implant temperature on transient enhanced diffusion of boron in regrown silicon after amorphization by Si+ or Ge+ implantation
- Source :
- Journal of Applied Physics. May 1, 1997, Vol. 81 Issue 9, p6051, 5 p.
- Publication Year :
- 1997
Details
- ISSN :
- 00218979
- Volume :
- 81
- Issue :
- 9
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.19567125