Effect of implant temperature on transient enhanced diffusion of boron in regrown silicon after amorphization by Si+ or Ge+ implantation

Authors :: Jones, K.S.
Moller, K.
Chen, J.
Puga-Lambers, M.
Freer, B.
Berstein, J.
Rubin, L.
Source :: Journal of Applied Physics. May 1, 1997, Vol. 81 Issue 9, p6051, 5 p.
Publication Year :: 1997

Subjects :: Ion implantation -- Research
Boron -- Analysis
Silicon -- Analysis
Amorphous semiconductors -- Analysis
Physics

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