A new model for {311} defects based on in situ measurements.

Authors :: Law, M.E.
Jones, K.S.
Source :: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138); 2000, p511-514, 4p
Publication Year :: 2000

Language :: English
ISBNs :: 9780780364387
Database :: Complementary Index
Journal :: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)
Publication Type :: Conference
Accession number :: 81623657
Full Text :: https://doi.org/10.1109/IEDM.2000.904367