Fluorine-enhanced boron diffusion in germanium-preamorphized silicon

Authors :: Jacques, J.M.
Jones, K.S.
Robertson, L.S.
Li-Fatou A.
Hazelton, C.M.
Napolitani, E.
Rubin, L.M.
Source :: Journal of Applied Physics. Oct 1, 2005, Vol. 98 Issue 7, p073521-1, 6 p.
Publication Year :: 2005
Abstract: The role of fluorine in regards to boron diffusion in germanium and silicon preamorphized silicon prior to activation annealing is characterized. Observations reveal that boron atoms can diffuse in germanium-amorphized silicon during recrystallization at elevated temperatures without the assistance of additional dopants.