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The effect of boron implant energy on transient enhanced diffusion in silicon
- Source :
- Journal of Applied Physics. Feb 15, 1997, Vol. 81 Issue 4, p1656, 5 p.
- Publication Year :
- 1997
- Subjects :
- Boron -- Research
Semiconductor doping -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 81
- Issue :
- 4
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.19278467