The effect of boron implant energy on transient enhanced diffusion in silicon

MLA

Liu, J., et al. “The Effect of Boron Implant Energy on Transient Enhanced Diffusion in Silicon.” Journal of Applied Physics, vol. 81, no. 4, Feb. 1997, p. 1656. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.19278467&authtype=sso&custid=ns315887.

APA

Liu, J., Krishnamoorthy, V., Grossman, H.-J., Law, M. E., Jones, K. S., & Rubin, L. (1997). The effect of boron implant energy on transient enhanced diffusion in silicon. Journal of Applied Physics, 81(4), 1656.

Chicago

Liu, J., V. Krishnamoorthy, H.-J. Grossman, M.E. Law, K.S. Jones, and L. Rubin. 1997. “The Effect of Boron Implant Energy on Transient Enhanced Diffusion in Silicon.” Journal of Applied Physics 81 (4): 1656. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.19278467&authtype=sso&custid=ns315887.