Effect of the silicon/oxide interface on iterstitials: Di-interstitial recombination

Research was conducted to examine the influence of the silicon/oxide interface on interstitials. A di-interstitial surface recombination mechanism is proposed to account for the time dependence of oxidation enhanced diffusion. Experimental results suggest that the enhancement is proportional to the square root of the oxide growth rate. The enhancement lasts as long as the oxide is growing and depends on the oxidation rate.