Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si

An experiment was undertaken to evaluate the effectiveness of high dose, low energy Czochralski (001) silicon wafers implanted with arsenic to produce a continuous amorphous layer to a depth of about 120 nm. The arsenic concentration surpassed the solid solubility of arsenic in silicon, arsenic clustering or precipitation transpiring on the estimated range of the implant. It was discovered that point defects in the implants, usually caused by arsenic clustering and precipitation, did not affect the enhanced diffusion of arsenic beyond the end-of-range damage.