Cite
Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si
MLA
Krishnamoorthy, V., et al. “Transient Enhanced Diffusion and Defect Microstructure in High Dose, Low Energy As+ Implanted Si.” Journal of Applied Physics, vol. 84, no. 11, Dec. 1998, p. 5997. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.53450602&authtype=sso&custid=ns315887.
APA
Krishnamoorthy, V., Moller, K., Jones, K. S., Venables, D., Jackson, J., & Rubin, L. (1998). Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si. Journal of Applied Physics, 84(11), 5997.
Chicago
Krishnamoorthy, V., K. Moller, K.S. Jones, D. Venables, J. Jackson, and L. Rubin. 1998. “Transient Enhanced Diffusion and Defect Microstructure in High Dose, Low Energy As+ Implanted Si.” Journal of Applied Physics 84 (11): 5997. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.53450602&authtype=sso&custid=ns315887.