Carbon incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe on Si at 500-600 degrees Celsius

Authors :: Antonell, M.J.
Jones, K.S.
Haynes, T.E.
Source :: Journal of Applied Physics. May 15, 1996, Vol. 79 Issue 10, p7646, 6 p.
Publication Year :: 1996

Subjects :: Electron microscopy -- Research
Carbon -- Analysis
Epitaxy -- Analysis
Recrystallization (Metallurgy) -- Research
Silicon -- Research
Germanium -- Research
Alloys -- Research
Physics

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