Back to Search
Start Over
Annealing kinetics of (311) defects and dislocation loops in the end-of-range damage region of ion implanted silicon
- Source :
- Journal of Applied Physics. March 15, 2000, Vol. 87 Issue 6, p2910, 4 p.
- Publication Year :
- 2000
-
Abstract
- Ex situ transmission electron microscopy was used to study the evolution of (311) defects and dislocation loops in the end-of-range damage region in silicon.
- Subjects :
- Ion implantation -- Usage
Silicon -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 87
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.65842994