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61 results on '"Luc Bideux"'

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1. Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode

2. DFT and experimental FTIR investigations of early stages of (0 0 1) and (1 1 1)B GaAs surface nitridation

3. Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process

4. Combined angle-resolved X-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide

5. New method for the determination of the correction function of a hemisperical electron analyser based on elastic electron images

6. Energy dependence of the energy loss function parametrization of indium in the Drude-Lindhard model

7. Real Time Infra-Red Absorption Analysis of Nitridation of GaAs(001) by Hydrazine Solutions

8. Role of interface states and depletion layer in NO2 sensing mechanism of n-InP epitaxial layers

9. Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

10. XPS combined with MM-EPES technique for in situ study of ultra thin film deposition: Application to an Au/SiO 2 /Si structure

11. Monte Carlo simulation for Multi-Mode Elastic Peak Electron Spectroscopy of crystalline materials: Effects of surface structure and excitation

12. XPS study of the O2/SF6 microwave plasma oxidation of (001) GaAs surfaces

13. SEM and XPS studies of nanohole arrays on InP(100) surfaces created by coupling AAO templates and low energy Ar+ ion sputtering

14. Growth study of thin indium nitride layers on InP (100) by Auger electron spectroscopy and photoluminescence

15. On the use of a O2:SF6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth

16. XPS, EPMA and microstructural analysis of a defective industrial plasma-nitrided steel

17. XPS study of the formation of ultrathin GaN film on GaAs(100)

18. A novel III–V semiconductor material for NO2 detection and monitoring

19. Interaction of hydrogen with InN thin films elaborated on InP(100)

20. Study of porous III–V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL): Effect of ionic bombardment and nitridation process

21. Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs

22. Nitridation of GaAs(1 0 0) substrates and Ga/GaAs systems studied by XPS spectroscopy

23. Record pure zincblende phase in GaAs nanowires down to 5 nm in radius

24. Electron inelastic mean free paths (IMFPs) in binary Au-Cu alloys determined by elastic peak electron spectroscopy

25. Development of Monte-Carlo simulations for nano-patterning surfaces associated with MM-EPES analysis

26. Effect of InSb layer on the interfacial and electrical properties in the structures based on InP

27. Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency

28. Determination of yield ratios of elastically backscattered electrons for deriving inelastic mean free paths in solids

29. Angular distribution of electrons elastically reflected from polycrystalline metals (Pd, In)

30. Characterization of the M.S structure by the surface photoelectrical voltage method

31. Epitaxial growth of InAsxP1−x/InP quantum wells by HVPE

32. Electrical study of the Au/InSb/InP system

33. Some applications of elastic peak electron spectroscopy for semiconductor surface studies

34. Modelization and characterization of Au/InSb/InP Schottky systems as a function of temperature

35. Passivation of III-V compounds used for metal-insulator-InP(100) structures

36. A study of InP(100) surface passivation by antimony deposition

37. Electrical characterization of alumina layers deposited by evaporation cell on Si and restructured InP substrates

38. Study of Al2O3 condensation on Si(100) and InP(100) substrates

39. Comparison of InP Schottky diodes based on Au or Pd sensing electrodes for NO2 and O3 sensing

40. Carbon diffusion and reactivity in Mn5Ge3 thin films

41. Electron spectroscopy of porous silicon layers. Indirect detection of hydrogen by elastic peak electron spectroscopy

42. The interaction of hydrogen with the InP(100) substrates studied by AES, elastic peak electron spectroscopy (EPES) and EELS

43. Structural and electrical study of 〈Au/InP(100)〉 and 〈Au/InSb/InP(100)〉 systems

44. Fast Growth Synthesis of GaAs Nanowires with Exceptional Length

45. First stages of surface steel nitriding: X-ray photoelectron spectroscopy and electrical measurements

46. Nitridation of InP(1 0 0) surface studied by synchrotron radiation

47. First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES

48. Morphology and optical properties of p-type porous GaAs(100) layers made by electrochemical etching

49. Effect of surface roughness on EPES and AREPES measurements: Flat and crenels silicon surfaces

50. A study of the 42CrMo4 steel surface by quantitative XPS electron spectroscopy

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