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Electrical study of the Au/InSb/InP system
- Source :
- Semiconductor Science and Technology. 14:266-270
- Publication Year :
- 1999
- Publisher :
- IOP Publishing, 1999.
-
Abstract
- In this work, we have studied the dominant transport mechanism in an Au/InSb/InP diode. The InP (n) substrate is restructured with some monolayers of an InSb thin film. The structures have been characterized electrically and the C(V) and I(V) curves have been plotted. The saturation current , the serial resistance and the mean ideality factor n were calculated using the I(V) characteristics and are respectively equal to , and 1.7. Thus, the doping level and diffusion voltage were deduced from the C(V) curves and are evaluated to and . The analysis of I(V) and C(V) characteristics allows us to determine that the mean interfacial density of states and the transmission coefficient are respectively equal to and . The presence of deep discrete donor levels in the semiconductor bulk and/or the distributed density of states is responsible for the nonlinearity of the characteristic because the C(V) curve is controlled by two donor levels located at 0.76 eV and 1.02 eV relative to the conduction band edge .
- Subjects :
- business.industry
Chemistry
Doping
Analytical chemistry
Substrate (electronics)
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Optics
Semiconductor
Saturation current
Materials Chemistry
Density of states
Transmission coefficient
Electrical and Electronic Engineering
Thin film
business
Diode
Subjects
Details
- ISSN :
- 13616641 and 02681242
- Volume :
- 14
- Database :
- OpenAIRE
- Journal :
- Semiconductor Science and Technology
- Accession number :
- edsair.doi...........bc43bacc51528283e90fb5ea24129f93