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Morphology and optical properties of p-type porous GaAs(100) layers made by electrochemical etching
- Source :
- Journal of Luminescence, Journal of Luminescence, Elsevier, 2008, 128 (10), pp.1611-1616. ⟨10.1016/j.jlumin.2008.03.008⟩, Journal of Luminescence, 2008, 128 (10), pp.1611-1616. ⟨10.1016/j.jlumin.2008.03.008⟩
- Publication Year :
- 2008
- Publisher :
- HAL CCSD, 2008.
-
Abstract
- Porous GaAs layers were formed by electrochemical etching of p-type GaAs(1 0 0) substrates in HF solution. A surface characterization has been performed on p-type GaAs samples using X-ray photoelectron spectroscopy (XPS) technique in order to get information about the chemical composition, particularly on the surface contamination. According to the XPS spectra, the oxide layer on as-received porous GaAs substrates contains As2O3, As2O5 and Ga2O3. Large amount of oxygen is present at the surface before the surface cleaning. Compared to untreated GaAs surface, room temperature photoluminescence (PL) investigations of the porous layers reveal the presence of two PL bands: a PL peak at ∼871 nm and a “visible” PL peak at ∼650–680 nm. Both peak wavelengths and intensities varied from sample to sample depending on the treatment that the samples have undergone. The short PL wavelength at 650–680 nm of the porous layers is attributed to quantum confinement effects in GaAs nano-crystallites. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-sized crystallites were observed on the porous GaAs surface. An estimation of the mean size of the GaAs nano-crystals obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results.
- Subjects :
- Materials science
Photoluminescence
Biophysics
Oxide
Analytical chemistry
02 engineering and technology
01 natural sciences
Biochemistry
chemistry.chemical_compound
X-ray photoelectron spectroscopy
0103 physical sciences
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
ComputingMilieux_MISCELLANEOUS
010302 applied physics
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Microstructure
Atomic and Molecular Physics, and Optics
chemistry
Nanocrystal
Quantum dot
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Crystallite
0210 nano-technology
Porous medium
Subjects
Details
- Language :
- English
- ISSN :
- 00222313 and 18727883
- Database :
- OpenAIRE
- Journal :
- Journal of Luminescence, Journal of Luminescence, Elsevier, 2008, 128 (10), pp.1611-1616. ⟨10.1016/j.jlumin.2008.03.008⟩, Journal of Luminescence, 2008, 128 (10), pp.1611-1616. ⟨10.1016/j.jlumin.2008.03.008⟩
- Accession number :
- edsair.doi.dedup.....5bc6e6eaac9cda9a4baadde832dde39e