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Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs
- Source :
- Superlattices and Microstructures, Superlattices and Microstructures, Elsevier, 2015, 83, pp.827-833. ⟨10.1016/j.spmi.2015.04.017⟩, Superlattices and Microstructures, 2015, 83, pp.827-833. ⟨10.1016/j.spmi.2015.04.017⟩
- Publication Year :
- 2015
- Publisher :
- HAL CCSD, 2015.
-
Abstract
- This work attempts to characterize the Au/GaN/GaAs Schottky diode. The thin GaN film is realized by nitridation of GaAs substrates with different thicknesses (0.7–2.2 nm). We propose a study of the electrical quality of the components after the elaboration of the Au/GaN/GaAs systems; first without annealing and the second with annealing at 620 °C. Analysis of the current voltage I – V and capacitance voltage C – V characteristics of the Au/heated GaN/GaAs and Au/GaN/GaAs samples with 2.2 nm of GaN thickness allows the determination of the electrical parameter variations. Then, the ideality factor increases after the annealing at 620 °C and becomes equal to 2.86 and 2.77 for the 5 min and 30 min of nitridation, respectively. The calculated states density N ss shows less defects and traps in the Au/GaN/GaAs structure (not heated). It is seen that the electrical parameters of the Au/heated GaN/GaAs diode are significantly different from the conventional Au/GaAs Schottky diode. The improvement of the parameters may be attributed to the passivation of the GaAs surface with the formation of the GaN interfacial layer.
- Subjects :
- Materials science
Passivation
Annealing (metallurgy)
business.industry
Schottky diode
Condensed Matter Physics
Capacitance voltage
Current voltage
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Optoelectronics
General Materials Science
Electrical and Electronic Engineering
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
business
ComputingMilieux_MISCELLANEOUS
Diode
Subjects
Details
- Language :
- English
- ISSN :
- 07496036 and 10963677
- Database :
- OpenAIRE
- Journal :
- Superlattices and Microstructures, Superlattices and Microstructures, Elsevier, 2015, 83, pp.827-833. ⟨10.1016/j.spmi.2015.04.017⟩, Superlattices and Microstructures, 2015, 83, pp.827-833. ⟨10.1016/j.spmi.2015.04.017⟩
- Accession number :
- edsair.doi.dedup.....279cb1d7e5cf37607434d2e8c584f877