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On the use of a O2:SF6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth
- Source :
- Applied Surface Science. 255:3897-3901
- Publication Year :
- 2009
- Publisher :
- Elsevier BV, 2009.
-
Abstract
- Preparation of processed GaAs surface cleaning in view of molecular beam epitaxy regrowth by means of a O 2 SF 6 microwave plasma has been investigated. Photoemission, Auger electron spectroscopy, atomic force microscopy and secondary ion mass spectrometry have been used for characterization. The O 2 SF 6 plasma treatment was found to be very efficient for decontaminating the GaAs surface and leads to the formation of an oxide layer that can be taken off by a thermal or low-temperature H-plasma-assisted deoxidation. The levels of oxygen and carbon contaminants at the regrowth interface were measured to be in the range of a standard homoepitaxial layer–epiready substrate interface. Fluorine was observed to be eliminated upon deoxidation while sulphur is present, particularly in the case of low temperature grown layers. This plasma treatment was found to be efficient for preparation of processed GaAs surfaces for molecular beam epitaxial regrowth.
- Subjects :
- Auger electron spectroscopy
Materials science
Oxide
Analytical chemistry
General Physics and Astronomy
Surfaces and Interfaces
General Chemistry
Substrate (electronics)
Condensed Matter Physics
Epitaxy
Ion source
Surfaces, Coatings and Films
Secondary ion mass spectrometry
chemistry.chemical_compound
chemistry
Molecular beam
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 255
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi...........3f16b3c43c1568083076035c8099708e