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Combined angle-resolved X-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide
- Source :
- Applied Surface Science, Applied Surface Science, Elsevier, 2018, 427, pp.662-669. ⟨10.1016/j.apsusc.2017.08.002⟩, Applied Surface Science, 2018, 427, pp.662-669. ⟨10.1016/j.apsusc.2017.08.002⟩
- Publication Year :
- 2018
- Publisher :
- HAL CCSD, 2018.
-
Abstract
- The high density of interface and surface states that cause the strong Fermi pinning observed on GaAs surfaces can be reduced by depositing GaN ultra-thin films on GaAs. To further improve this passivation, it is necessary to investigate the nitridation phenomena by identifying the distinct steps occurring during the process and to understand and quantify the growth kinetics of GaAs nitridation under different conditions. Nitridation of the cleaned GaAs substrate was performed using N 2 plasma source. Two approaches have been combined. Firstly, an AR-XPS (Angle Resolved X-ray Photoelectron Spectroscopy) study is carried out to determine the chemical environments of the Ga, As and N atoms and the composition depth profile of the GaN thin film which allow us to summarize the nitridation process in three steps. Moreover, the temperature and time treatment have been investigated and show a significant impact on the formation of the GaN layer. The second approach is a refined growth kinetic model which better describes the GaN growth as a function of the nitridation time. This model clarifies the exchange mechanism of arsenic with nitrogen atoms at the GaN/GaAs interface and the phenomenon of quasi-saturation of the process observed experimentally.
- Subjects :
- Materials science
Passivation
Analytical chemistry
General Physics and Astronomy
02 engineering and technology
Substrate (electronics)
01 natural sciences
Gallium arsenide
chemistry.chemical_compound
X-ray photoelectron spectroscopy
0103 physical sciences
Thin film
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
ComputingMilieux_MISCELLANEOUS
Surface states
010302 applied physics
Surfaces and Interfaces
General Chemistry
Plasma
021001 nanoscience & nanotechnology
Condensed Matter Physics
Surfaces, Coatings and Films
chemistry
Chemical physics
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Density functional theory
0210 nano-technology
Subjects
Details
- Language :
- English
- ISSN :
- 01694332
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science, Applied Surface Science, Elsevier, 2018, 427, pp.662-669. ⟨10.1016/j.apsusc.2017.08.002⟩, Applied Surface Science, 2018, 427, pp.662-669. ⟨10.1016/j.apsusc.2017.08.002⟩
- Accession number :
- edsair.doi.dedup.....c8e535503bb2eaf0b2bb88edf0457589