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Focuses on a study that analyzed the parasitic bipolar amplification of silicon on insulator devices as a function of the technology integration from 0.8 µ meter down to 0.1 µ meter. Description of devices and experiments; Results on transistors and registers; Discussion on circuit hardness versus integration.

Focuses on a study that investigated the sensitivity to heavy ions of nonhardened 0.25-µ m partially depleted silicon on insulator and bulk technologies with experiments, device, and circuit simulations. Devices, experiments and simulations; Heavy ion results; Discussion; Conclusion.

Focuses on a study that performed charge collection measurements on silicon-on-insulator diodes with heavy ion microbeam and pulsed focused laser. Experiments; Results; Discussion; Conclusion.

Deals with a study which explored how the parasitic bipolar amplification in metal-oxide-semiconductors/silicon-on-insulator (MOS/SOI) transistors determines the single-event upset sensitivity of actual devices. Background on SOI technologies; Materials and methodology used; Results and discussion.

Presents information on a study which determined the single event burnout (SEB) sensitive area in a power metal-oxide semiconductor field-effect transistor irradiated with a high-linear energy transfer heavy-ion microbeam. Simulation of SEB; Experimental data; Results and discussion; Conclusions.

Presents information on a study which investigated the impact of ion energy on single-event upset by irradiating complementary metal-oxide semiconductors (CMOS) static random access memory (SRAM) with low and heavy energy ions. Experimental details; Comparisons of low- and high-energy ions; Three dimensional simulation; Discussion and conclusions.

Presents information on a study which observed the effects of the radial density distribution of carriers generated in a single ion track in thin silicon detectors. Experimental results; Analysis of capacitor response; Determination of the effective track profile.

Focuses on a study which analyzed the single event effects at grazing angles of integrated circuits, in relation to the charge transfer between adjacent reverse biased structures. In-depth look at the interaction of the single high energy ion with an integrated circuit at a grazing angle; Details on the multiple bit upsets; Methodology used to conduct the study; Results of the study.

Reports on the development of a radiation hardness assurance method used on CMOS, JFET and bipolar transistors. Details on high dose rate irradiation; Proposition of a test procedure which combined the high temperature irradiation and isochronal anneals; Information on the MOS devices' Post Irradiation Effects.

Looks at devices which measure the irradiated the front and the back of ions. Information on test devices used in experiments; Discussion on possible experimental artifacts; Details on collection charge measurements; Indepth look at the results from these experiments.

Examines the measurements of charge collection spectroscopy in submicron CMOS/SOI devices. Reference to the bipolar mechanism; Presentation of experimental measurement of charge collection spectroscopy.

Studies multiple bit upsets (MBU) in a 256k complementary metal oxide semiconductor static random access memory (CMOS SRAM) irradiated at normal incidence and grazing angle. Summary of simulated irradiations; Influence of minority carrier lifetime; Average sensitivity at grazing angle; Scheme of the experimental setup at grazing angle.

Focuses on a study of the LiNbO3:Ti Mach-Zehnder optomodulators' radiation hardness under high energy electron pulses, which was at a high dose rate. Details on the electrical and optical measurements; Observation of electrical and optical perturbations; Methodology used to conduct the study; Results of the study.

Presents a study which examined the electron trapping properties of Unibond oxides, with reference to Silicon-On-Insulator technologies. Method used to measure the radiative response of Unibond oxides under different irradiation conditions; Comparison of Separation by IMplanted OXygen (SIMOX) and Unibond oxides; Information on the use of X-ray irradiation to investigate the trapping properties of the Unibond buried oxide.

Examines the ionizing aspects regarding the single event multiple upset. What the semiconductor transistor fabrication techniques have allowed; Definition of the multiple bit upset (MBU); Details on simulation techniques.