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Comparison of the Sensitivity to Heavy Ions of 0.25-ยต m Bulk and SOI Technologies.

Authors :
Gasiot, G.
Ferlet-Cavrois, V.
Roche, P.
Flatresse, P.
D'Hose, C.
Musseau, O.
Du Port de Poncharra, J.
Source :
IEEE Transactions on Nuclear Science; Jun2002 Part 3 of 4, Vol. 49 Issue 3, p1450, 6p, 3 Diagrams, 3 Charts, 4 Graphs
Publication Year :
2002

Abstract

Focuses on a study that investigated the sensitivity to heavy ions of nonhardened 0.25-µ m partially depleted silicon on insulator and bulk technologies with experiments, device, and circuit simulations. Devices, experiments and simulations; Heavy ion results; Discussion; Conclusion.

Details

Language :
English
ISSN :
00189499
Volume :
49
Issue :
3
Database :
Complementary Index
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
7679921
Full Text :
https://doi.org/10.1109/TNS.2002.1039682