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Characterization of the Parasitic Bipolar Amplification in SOI Technologies Submitted to Transient Irradiation.
- Source :
- IEEE Transactions on Nuclear Science; Jun2002 Part 3 of 4, Vol. 49 Issue 3, p1456, 6p, 2 Diagrams, 1 Chart, 6 Graphs
- Publication Year :
- 2002
-
Abstract
- Focuses on a study that analyzed the parasitic bipolar amplification of silicon on insulator devices as a function of the technology integration from 0.8 µ meter down to 0.1 µ meter. Description of devices and experiments; Results on transistors and registers; Discussion on circuit hardness versus integration.
- Subjects :
- SILICON-on-insulator technology
TRANSISTORS
RADIATION
Subjects
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 49
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 7679922
- Full Text :
- https://doi.org/10.1109/TNS.2002.1039683