Back to Search
Start Over
Physical characterization of electron trapping in unibond oxides.
- Source :
- IEEE Transactions on Nuclear Science; Jun98 Part 3 of 4, Vol. 45 Issue 3, p1402, 5p, 1 Chart, 6 Graphs
- Publication Year :
- 1998
-
Abstract
- Presents a study which examined the electron trapping properties of Unibond oxides, with reference to Silicon-On-Insulator technologies. Method used to measure the radiative response of Unibond oxides under different irradiation conditions; Comparison of Separation by IMplanted OXygen (SIMOX) and Unibond oxides; Information on the use of X-ray irradiation to investigate the trapping properties of the Unibond buried oxide.
- Subjects :
- OXIDES
SILICON-on-insulator technology
Subjects
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 45
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 919066
- Full Text :
- https://doi.org/10.1109/23.685214