Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology.

Details

Language :

English

ISSN :

00189499

Volume :

41

Issue :

6

Database :

Complementary Index

Journal :

IEEE Transactions on Nuclear Science

Publication Type :

Academic Journal

Accession number :

93148963

Full Text :

https://doi.org/10.1109/23.340611