1. InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics
- Author
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M. M. Kulagina, E. V. Petryakova, A. P. Vasil’ev, M. A. Bobrov, V. A. Belyakov, Nikolai A. Maleev, S. N. Maleev, I. V. Makartsev, Yu. P. Kudryashova, F. A. Ahmedov, S. I. Troshkov, V. M. Ustinov, S. A. Blokhin, A. G. Fefelov, E. L. Fefelova, A. V. Egorov, and A. G. Kuzmenkov
- Subjects
010302 applied physics ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Transconductance ,Amplifier ,Transistor ,Heterojunction ,02 engineering and technology ,Integrated circuit ,High-electron-mobility transistor ,021001 nanoscience & nanotechnology ,01 natural sciences ,law.invention ,law ,Etching (microfabrication) ,0103 physical sciences ,Breakdown voltage ,Optoelectronics ,0210 nano-technology ,business - Abstract
A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs with a T‑shaped gate 120 nm in length consist of four fingers, each 30 μm in width, exhibit a maximum transconductance of 810 mS/mm, 460-mA/mm maximum density of drain current and 8- to 10-V drain-to-gate breackdown voltage. The current-amplification cut-off frequency of transistors is over 115 GHz. Due to the enhanced breakdown voltage and the forming of a double recess structure by selective etching, the elaborated transistors are promising for application in the monolithic integrated circuits of the millimeter-wave medium power amplifiers.
- Published
- 2019