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Solar-blind Al x Ga1–x N (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter
- Source :
- Technical Physics Letters. 42:635-638
- Publication Year :
- 2016
- Publisher :
- Pleiades Publishing Ltd, 2016.
-
Abstract
- Polarization-induced p-type doping of AlGaN layers with high aluminum content during plasmaassisted MBE growth has been studied. It is shown that a gradient of the AlN molar fraction in AlGaN (composition gradient) on a level of 0.005 nm–1 must be set in order to obtain a hole concentration of ~1018 cm–3 (measured by the C–V method) in Al x Ga1–x N:Mg (x = 0.52–0.32) layers with dopant concentration [Mg] = 1.3 × 1018 cm–3. p–i–n photodiodes based on AlGaN heterostructures with such layers as p-emitters showed maximum photoresponsitivity in the solar-blind wavelength range (λ = 281 nm) about 35 and 48 mA/W at reverse bias voltage U = 0 and–5 V, respectively, and exhibited a dark current density of 3.9 × 10–8 A/cm2 at U =–5 V.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
Dopant
business.industry
Doping
Analytical chemistry
Heterojunction
02 engineering and technology
021001 nanoscience & nanotechnology
Polarization (waves)
Mole fraction
01 natural sciences
Photodiode
law.invention
law
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Common emitter
Dark current
Subjects
Details
- ISSN :
- 10906533 and 10637850
- Volume :
- 42
- Database :
- OpenAIRE
- Journal :
- Technical Physics Letters
- Accession number :
- edsair.doi...........a2efabf27bf265da6a8bb3932e79a410