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Vertical cavity surface emitting laser of 1.55 μm spectral range, manufactured by molecular beam epitaxy and wafer fusion technique
- Source :
- Journal of Physics: Conference Series. 1697:012178
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
-
Abstract
- The heterostructure design for 1.55 μm range VCSELs is proposed and realized. The wafer fusion technique was used to form the final heterostructure. The growth of AlGaAs/GaAs distributed Bragg reflectors (DBRs) on GaAs substrate and the optical cavity with an active region on InP substrate as well as a tunnel junction (TJ) regrowth was performed by molecular beam epitaxy (MBE). A key feature of the proposed design is the use of n++-InGaAs/p++-InGaAs/p++-InAlGaAs TJ, which allows, due to the effective removal of oxide from the InGaAs surface, to use MBE for re-growth of the TJ surface relief. Despite of the presence in heterostructure a narrow-gap InGaAs layers, a noticeable increase in internal optical loss in lasers can be avoided due to the short-wavelength shift of the edge of interband light absorption in ++-InGaAs layers (Burshtein-Moss effect). Fabricated VCSELs demonstrate single-mode operation with a threshold current less than 2 mA and a slope efficiency of ~ 0.46 W/A, which are comparable with characteristics of VCSELs with n++/p++-InAlGaAs TJ with a similar level of mirror losses.
Details
- ISSN :
- 17426596 and 17426588
- Volume :
- 1697
- Database :
- OpenAIRE
- Journal :
- Journal of Physics: Conference Series
- Accession number :
- edsair.doi...........644a32c9e6a18a407ba63b2fa7cf03e7