Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands

Authors :: S I Troshkov
V. N. Jmerik
A. A. Usikova
A. N. Semenov
Stefan Ivanov
E. A. Evropeytsev
A. A. Toropov
Pavel N. Brunkov
V. Kh. Kaibyshev
Dmitrii V. Nechaev
Source :: Semiconductors. 52:622-624
Publication Year :: 2018
Publisher :: Pleiades Publishing Ltd, 2018.
Abstract: AbstractWe report on fabrication and studies of composite heterostuctures consisting of an Al_0.55Ga_0.45N/A_l0.8Ga_0.2N quantum well and surface Al nanoislands, grown by plasma-assisted molecularbeam epitaxy on c-sapphire substrates. The influence of a substrate temperature varied between 320 and 700ºC on the size and density of the deposited Al nanoislands is evaluated. The effect of Al nanoislands on decay kinetics of the quantum well middle-ultraviolet photoluminescence has been investigated by time resolved photoluminescence. The samples with the maximum density of Al nanoislands of 10^8 cm^–2 and lateral dimensions in the range of 100–500 nm demonstrated shortening of the photoluminescence lifetime, induced by interaction of the emitting quantum well and the plasmonic metal particles.

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