Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide

Authors :: W. V. Lundin
S. I. Troshkov
M. A. Sinitsyn
S. A. Kukushkin
N. A. Feoktistov
A. V. Osipov
A. F. Tsatsul’nikov
S. G. Zhukov
M. M. Rozhavskaya
E. E. Zavarin
Source :: Technical Physics Letters. 38:297-299
Publication Year :: 2012
Publisher :: Pleiades Publishing Ltd, 2012.
Abstract: A light-emitting diode (LED) structure based on group III nitride has been grown for the first time on Si(111) substrate with SiC buffer nanolayer (50- to 200-nm-thick) obtained by solid-phase epitaxy. This LED structure is characterized by record low (

Subjects :: Materials science
Physics and Astronomy (miscellaneous)
Silicon
business.industry
chemistry.chemical_element
Nitride
Epitaxy
law.invention
chemistry.chemical_compound
chemistry
law
Lattice (order)
Silicon carbide
Optoelectronics
Dislocation
business
Light-emitting diode
Diode

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