Structural and optical properties of InAlN/GaN distributed Bragg reflectors

Authors :: M. A. Sinitsyn
A. V. Sakharov
A. F. Tsatsul’nikov
Nikolai N. Ledentsov
Andrey E. Nikolaev
N. V. Kryzhanovskaya
S. I. Troshkov
E. E. Zavarin
V. V. Lundin
S. O. Usov
Source :: Semiconductors. 44:949-953
Publication Year :: 2010
Publisher :: Pleiades Publishing Ltd, 2010.
Abstract: Structural and optical properties of InAlN/GaN distributed Bragg reflectors grown by MOCVD on sapphire substrates are studied. The influence of growth conditions and thicknesses of the InAlN layers on structural properties of distributed Bragg reflectors is studied. It is shown that optimization of the conditions of epitaxial growth makes it possible to design InAlN/GaN distributed Bragg reflectors with a reflectance of more than 99% and a reflection maximum in the wavelength range of 460-610 nm.