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Various types of GaN/InGaN nanostructures grown by MOCVD on Si(111) substrate
- Source :
- physica status solidi c. 10:441-444
- Publication Year :
- 2013
- Publisher :
- Wiley, 2013.
-
Abstract
- In this paper we obtained GaN and InGaN nanowires on AlN/Si (111) templates via pulsed Metal Organic Chemical Vapour Deposition (MOCVD). The growth modes were investigated, in which selective growth is possible. The impact of NH3 flow and TMG flow and exposure time were investigated. Also the possibility of using indium catalyst was studied. It was shown that In can be used in Au-In melt and as self-suffisient catalyst. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Subjects :
- Nanostructure
Materials science
business.industry
Nanowire
chemistry.chemical_element
Nanotechnology
Gallium nitride
Chemical vapor deposition
Substrate (electronics)
Condensed Matter Physics
Catalysis
chemistry.chemical_compound
chemistry
Optoelectronics
Metalorganic vapour phase epitaxy
business
Indium
Subjects
Details
- ISSN :
- 16101642 and 18626351
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- physica status solidi c
- Accession number :
- edsair.doi...........6119e1ca93e363415a969ece3504ca90