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Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
- Source :
- Physics of the Solid State. 57:1899-1907
- Publication Year :
- 2015
- Publisher :
- Pleiades Publishing Ltd, 2015.
-
Abstract
- This paper presents the results of the electron microscopic study of GaN/AlGaN/AlN/SiC/Si(111) structures grown by the metal-organic vapor phase epitaxy. A SiC epitaxial buffer nanolayer has been grown by a new method of substitution of atoms on the Si(111) substrate. It has been found that there is a strong dependence of the density of dislocations and V-defects on the synthesis conditions of SiC and the thickness of the AlN layer. It has been proved experimentally that the creation of a low-temperature AlN insert with a simultaneous decrease in the thickness of the AlN layer to values of no more than 50 nm makes it possible to almost completely prevent the formation of V-defects in the GaN layer. The density of screw and mixed dislocations in the GaN layer of the studied samples lies in the range from 5 × 109 to 1 × 1010 cm−2. A theoretical model of the formation of V-defects during the growth of GaN has been developed.
- Subjects :
- Range (particle radiation)
Materials science
Solid-state physics
business.industry
Vapor phase
Substrate (electronics)
Condensed Matter Physics
Epitaxy
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Si substrate
chemistry
Silicon carbide
Optoelectronics
business
Layer (electronics)
Subjects
Details
- ISSN :
- 10906460 and 10637834
- Volume :
- 57
- Database :
- OpenAIRE
- Journal :
- Physics of the Solid State
- Accession number :
- edsair.doi...........130a7cea1d7cbb61e63f2db1073ca758