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Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR
- Source :
- Semiconductors. 47:993-996
- Publication Year :
- 2013
- Publisher :
- Pleiades Publishing Ltd, 2013.
-
Abstract
- Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector (DBR) for the 850 nm spectral region are fabricated. The suggested design provides stable single-mode generation in the entire range of working currents, limited by overheating of the active region. Devices with intracavity contacts and a comparatively large current-aperture diameter (5–6 μm) exhibit single-mode lasing at a wavelength of 840–845 nm in the continuous-wave mode at room temperature with threshold currents of 1.2–1.3 mA, a differential efficiency of 0.5–0.55 mW mA−1, and anoutput power of up to 2 mW.
- Subjects :
- Materials science
business.industry
Physics::Optics
Dielectric
Condensed Matter Physics
Laser
Distributed Bragg reflector
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
law.invention
Wavelength
Optics
Semiconductor
law
Optoelectronics
business
Lasing threshold
Overheating (electricity)
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 47
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........e49c00f22ad40f6f1122399a587e0ce0