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The optical characteristics of vertical cylindrical micropillars with AlGaAs distributed Bragg reflectors and InAs/GaAs quantum dots, which are designed for the fabrication of single-photon sources, have been studied. The effect of parameters such as the inclination angle of sidewalls, partial oxidation of AlGaAs layers, and deviation of quantum dots from the central axis of a micropillar on the Purcell factor and the radiation extraction efficiency has been numerically simulated by the finite-difference time-domain method. The allowable ranges of the listed parameters have been determined for cylindrical vertical 920-nm micropillars. The comparison of the calculations performed with the refined refractive indices of the used materials at cryogenic temperatures with the measured characteristics of the fabricated micropillar structures has confirmed the adequacy of the used models.

We have demonstrated that SiC mesastructures with gently sloping sidewalls form with the help of selective reactive ion etching (RIE) of silicon carbide through a photoresist mask (slanted walls are formed during simultaneous etching of SiC and the resistive mask with the edge in the shape of a sharp wedge). A simple geometrical model of etching predicts that the resultant slope of the mesastructure wall must be specified by two parameters, i.e., initial angle of the resistive wedge and the selectivity of SiC etching relative to the photoresist (ratio of etching rates of SiC and photoresist). For experiments, we used polished 4H–SiC wafers with the (0001) orientation. Photoresist regions with an edge angle of 22° were deposited using photolithography onto the Si side of the wafers. Then etching of mesastructures was performed in nitrogen trifluoride in a setup with an inductively coupled plasma. We selected RIE parameters ensuring SiC and photoresist etching with rates of 55 and 160 nm/min, respectively (etching selectivity was 1 : 3). The SiC mesastructures formed by etching have a height of 3.2 μm and gently sloping sidewalls with a slope of about 8°. This technology can be used for preparing high-voltage SiC devices with a straight bevel.

A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs with a T‑shaped gate 120 nm in length consist of four fingers, each 30 μm in width, exhibit a maximum transconductance of 810 mS/mm, 460-mA/mm maximum density of drain current and 8- to 10-V drain-to-gate breackdown voltage. The current-amplification cut-off frequency of transistors is over 115 GHz. Due to the enhanced breakdown voltage and the forming of a double recess structure by selective etching, the elaborated transistors are promising for application in the monolithic integrated circuits of the millimeter-wave medium power amplifiers.

We describe the growth, material characterization, and lasing of InP/GaInP quantum dot (QD) microdisks (diameter D = 2.2 [Formula: see text]m, quality factor [Formula: see text]) with an emission lasing line of 693 nm (77 K). We demonstrate that MOVPE growth can result in two types of InP/GaInP QDs, differing in height (type A [Formula: see text]–10 nm, type B [Formula: see text] nm), whose emission has different decay lifetimes ([Formula: see text] ns, [Formula: see text] ns). We show, importantly for technological microlasing applications, that lasing occurs via the excited states of type A QDs, as inferred from a number of experimental results: power-dependent photoluminescence, time-resolved experiments, and temperature dependence of the generation threshold.

The statistics of photon correlations in the emission of single InAs/AlGaAs quantum dots grown by molecular beam epitaxy and fitted with AlGaAs waveguide nanoantennas for efficient extraction of radiation is investigated. A single-photon source for the red spectral range with an average emission rate exceeding 5 MHz and a zero-delay second-order correlation function of g(2)(0) = 0.08 is realized on the basis of these photonic nanostructures. The degree of indistinguishability of consecutively emitted photons measured in Hong-Ou-Mandel interferometry under above-barrier excitation is about 30%.

The growth features of GaN nanorods on patterned c-sapphire substrates with a regular microcone array having a different density and base diameter in the ranges of (1–5) × 107 cm–2 and 2.5–3.5 μm, respectively, are investigated. The kinetics is studied and the selective-growth regimes are determined for single GaN nanorods with a diameter of 30–100 nm at the vertices of microcones under radically lower growth rates on their slopes. The effect of the configuration of microcones, the substrate temperature, the roughness of the initial surface, and the presence of indium as a surfactant on the degree of growth selectivity is investigated.

The site-controlled selective area growth of N-polar GaN nanorods (NR) was developed by plasma-assisted MBE (PA MBE) on micro-cone-patterned sapphire substrates (µ-CPSS) by using a two-stage growth process. A GaN nucleation layer grown by migration enhanced epitaxy provides the best selectivity for nucleation of NRs on the apexes of 3.5-µm-diameter cones, whereas the subsequent growth of 1-μm-high NRs with a constant diameter of about 100 nm proceeds by standard high-temperature PA MBE at nitrogen-rich conditions. These results are explained by anisotropy of the surface energy for GaN of different polarity and crystal orientation. The InGaN single quantum wells inserted in the GaN NRs grown on the µ-CPSS demonstrate photoluminescence at 510 nm with a spatially periodic variation of its intensity with a period of ∼6 µm equal to that of the substrate patterning profile.

The possibility of fabricating hybrid metamorphic heterostructures for vertical-cavity surfaceemitting lasers working in the 1300-nm spectral range is demonstrated. The metamorphic semiconductor part of the heterostructure with a GaAs/AlGaAs distributed Bragg reflector and an active region based on InAlGaAs/InGaAs quantum wells is grown by molecular-beam epitaxy on a GaAs (100) substrate. The top dielectric mirror with a SiO2/Ta2O5 distributed Bragg reflector is formed by magnetron sputtering. The spectra of the room-temperature microphotoluminescence of these vertical-cavity surface-emitting laser heterostructures are studied under 532-nm excitation in the power range of 0–70 mW (with a focused-beam diameter of ~1 μm). The superlinear dependence of the photoluminescence intensity on the excitation power, narrowing of the photoluminescence peaks, and a change in the modal composition may be indications of lasing. The results obtained give evidence that the technology of the metamorphic growth of heterostructures on GaAs substrates can be used for the fabrication of vertical-cavity surface-emitting lasers working in the 1300- nm spectral range.

The emissivity of unstrained quantum-dimensional InP/AlInAs nanostructures and their lasing properties in microdisk cavities prepared by wet etching have been studied. For as-prepared structures, it has been found that they radiate owing to quantum-dimensional InP islands 50–300 nm in diameter. At temperatures below 160 K, whispering gallery modes have been observed in the microdisks. Experimental data on the PL intensity for microcavity modes versus the pump power, which were obtained at liquid helium temperature, have made it possible to find the lasing threshold, 50 W/cm2. The half-width of the laser line at above-threshold powers equals 0.06 nm, which corresponds to a Q factor of 15 000.

It has been shown that the interaction of 1 MeV protons at doses of (0.5–2) × 1014 cm–2 with transistor structures having a 2D AlGaN/GaN channel (AlGaN/GaN HEMTs) is accompanied not only by the generation of point defects, but also by the formation of local regions with a disordered nanomaterial. The degree of disorder of the nanomaterial was evaluated by multifractal analysis methods. An increase in the degree of disorder of the nanomaterial, manifested the most clearly at a proton dose of 2 × 1014 cm–2, leads to several-fold changes in the mobility and electron density in the 2D channel of HEMT structures. In this case, the transistors show a decrease in the source–drain current and an order-of-magnitude increase in the gate leakage current. In HEMT structures having an enhanced disorder of the nanomaterial prior to exposure to protons, proton irradiation results in suppression of the 2D conductivity in the channel and failure of the transistors, even at a dose of 1 × 1014 cm–2.

AbstractWe report on fabrication and studies of composite heterostuctures consisting of an Al_0.55Ga_0.45N/A_l0.8Ga_0.2N quantum well and surface Al nanoislands, grown by plasma-assisted molecularbeam epitaxy on c-sapphire substrates. The influence of a substrate temperature varied between 320 and 700ºC on the size and density of the deposited Al nanoislands is evaluated. The effect of Al nanoislands on decay kinetics of the quantum well middle-ultraviolet photoluminescence has been investigated by time resolved photoluminescence. The samples with the maximum density of Al nanoislands of 10^8 cm^–2 and lateral dimensions in the range of 100–500 nm demonstrated shortening of the photoluminescence lifetime, induced by interaction of the emitting quantum well and the plasmonic metal particles.

The heterostructure design for 1.55 μm range VCSELs is proposed and realized. The wafer fusion technique was used to form the final heterostructure. The growth of AlGaAs/GaAs distributed Bragg reflectors (DBRs) on GaAs substrate and the optical cavity with an active region on InP substrate as well as a tunnel junction (TJ) regrowth was performed by molecular beam epitaxy (MBE). A key feature of the proposed design is the use of n++-InGaAs/p++-InGaAs/p++-InAlGaAs TJ, which allows, due to the effective removal of oxide from the InGaAs surface, to use MBE for re-growth of the TJ surface relief. Despite of the presence in heterostructure a narrow-gap InGaAs layers, a noticeable increase in internal optical loss in lasers can be avoided due to the short-wavelength shift of the edge of interband light absorption in ++-InGaAs layers (Burshtein-Moss effect). Fabricated VCSELs demonstrate single-mode operation with a threshold current less than 2 mA and a slope efficiency of ~ 0.46 W/A, which are comparable with characteristics of VCSELs with n++/p++-InAlGaAs TJ with a similar level of mirror losses.

Studies aimed at optimization of the design of a dielectric distributed Bragg reflector (DBR) produced by the reactive magnetron sputtering method for applications in near-IR vertical-cavity surface-emitting lasers with intracavity contacts (ICC-VCSELs) are carried out. It is shown that the reflectivity of the dielectric DBRs based on SiO2/TiO2 decreases due to the polycrystalline structure of the TiO2 layers, which causes diffusive scattering of light. In contrast, amorphous Ta2O5 layers is characterized by a low surface roughness and low fluctuation in the refractive index. Single-mode ICC-VCSELs in the 980-nm spectral range with dielectric DBR based on SiO2/Ta2O5 with a threshold current less than 0.27 mA, electric resistance of less than 200 Ω, and differential efficiency of more than 0.8 W/A are demonstrated.

The fundamental possibility of achieving temperature stability of laser emitters of 1.3-μm spectral range exhibiting a vertical microcavity and an active region based on InAs/InGaAs quantum dots (QDs) is investigated. It is demonstrated that using an undoped hybrid vertical optical microcavity formed by a lower undoped semiconductor and an upper distributed dielectric Bragg reflectors allows obtaining laser oscillation up to a temperature of ~100°C at nearly constant threshold optical pump power for an active region consisting of QD layers under optimal spectral mismatch between the position of maximum gain of the QD ground state and the resonance wavelength.

The spectral, threshold, and power characteristics of a microdisk laser 31 μm in diameter with an active region based on InAs/InGaAs quantum dots, operating in the continuous-wave (cw) mode at room temperature are studied. The minimum threshold current density is 0.58 kA/cm2, the subthreshold linewidth of the whispering-gallery mode is 50 pm at a wavelength lying in the range of 1.26–1.27 μm. The total power emitted into free space reaches ~0.1 mW in the cw mode, whereas the radiation power of the whispering-gallery modes is ~2.8%.

The polarization characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with intracavity contacts and a rhomboidal oxide current aperture are studied. It is found that radiation polarization is always directed along the minor diagonal of the rhomboidal aperture (along the [ $$\overline 1 $$ 10] direction) for all single-mode VCSELs. The numerical simulation of carrier transport does not reveal the significant anisotropy of carrier injection to the active region. Furthermore, an analysis of the spatial distribution of the fundamental mode for two orthogonal polarizations within an effective waveguide model shows close transverse optical-confinement factors. Optical loss anisotropy in the asymmetric microcavity and/or gain anisotropy in the strained active region are the most likely mechanisms responsible for fixing the polarization.

Polarization-induced p-type doping of AlGaN layers with high aluminum content during plasmaassisted MBE growth has been studied. It is shown that a gradient of the AlN molar fraction in AlGaN (composition gradient) on a level of 0.005 nm–1 must be set in order to obtain a hole concentration of ~1018 cm–3 (measured by the C–V method) in Al x Ga1–x N:Mg (x = 0.52–0.32) layers with dopant concentration [Mg] = 1.3 × 1018 cm–3. p–i–n photodiodes based on AlGaN heterostructures with such layers as p-emitters showed maximum photoresponsitivity in the solar-blind wavelength range (λ = 281 nm) about 35 and 48 mA/W at reverse bias voltage U = 0 and–5 V, respectively, and exhibited a dark current density of 3.9 × 10–8 A/cm2 at U =–5 V.

We have studied the influence of technological parameters on the surface morphology and development of mechanical stresses in Al(Ga)N layers during their growth by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates. Minimization of tensile stresses under conditions of a retained atomically smooth surface can be achieved by using a combination of factors including (i) nitridation of substrate in ammonia flow, (ii) formation of two-layer AlN–Al(Ga)N structures by introducing a small amount (several percent) of Ga after growth of a thin AlN layer, and (iii) reduction of ammonia flow during growth of an Al(Ga)N layer.

Microdisk injection lasers on GaAs substrates, with a minimum diameter of 15 μm and an active region based on InAs/InGaAs quantum dots, are fabricated. The lasers operate in the continuous-wave mode at room temperature without external cooling. The lasing wavelength is around 1.27 μm at a minimum threshold current of 1.6 mA. The specific thermal resistance is estimated to be 5 × 10–3 °C cm2/W.

We report on suppression of the Stark effect in (1.5-2)-monolayer(ML)-thick (GaN/AlN)100 multiple quantum well (MQW) structures grown on AlN/c-Al2O3 templates by plasma-assisted molecular beam epitaxy. Different stress relaxation mechanisms are revealed in these structures by using a multi-beam optical stress sensor in comparison with the 5ML-MQW structure. The former (with well thicknesses ⩽2MLs) demonstrate the nearly stress-free growth, whereas the latter structure with thicker wells exhibits the slow stress evolution from the high initial compressive stress to the nearly relaxed state with zero stress. Moreover, the former structures demonstrate a bright room-temperature cathodoluminescence (CL) with the single peak at the shortest wavelength 240 nm (1.5ML-QWs), while the latter shows much weaker multi-peak CL spectra in the spectral range of 270-360 nm.

We describe stress evolution during plasma-assisted molecular beam epitaxy (PAMBE) of AlN nucleation and buffer layers on c-Al2O3 substrates at varying growth temperatures of 780 and 850°C. Moreover, different mechanisms of stress generation in the growing AlN films, related to the processes of grain coalescence and impact of Me-excess during PA MBE by migration enhanced epitaxy and metal-modulated epitaxy, are considered.

Heavily Si-doped Al x Ga1–x N mesastrip structures were grown by selective MOVPE technology. Al x Ga1–x N:Si mesastructures with x ~ 0.01–0.07 possess a smoother top and more even side surfaces as compared to those in analogous GaN:Si structures. During the growth of mesastructures with x ~ 0.03–0.07, a thin nanocrystalline AlN deposit appears on the Si3N4 mask. This deposit is not formed during the growth of structures with sufficiently low aluminum content.

This paper presents the results of the electron microscopic study of GaN/AlGaN/AlN/SiC/Si(111) structures grown by the metal-organic vapor phase epitaxy. A SiC epitaxial buffer nanolayer has been grown by a new method of substitution of atoms on the Si(111) substrate. It has been found that there is a strong dependence of the density of dislocations and V-defects on the synthesis conditions of SiC and the thickness of the AlN layer. It has been proved experimentally that the creation of a low-temperature AlN insert with a simultaneous decrease in the thickness of the AlN layer to values of no more than 50 nm makes it possible to almost completely prevent the formation of V-defects in the GaN layer. The density of screw and mixed dislocations in the GaN layer of the studied samples lies in the range from 5 × 109 to 1 × 1010 cm−2. A theoretical model of the formation of V-defects during the growth of GaN has been developed.

Paper presents the comparative analysis of Metal Modulated Epitaxy (MME) and Droplet Elimination by Thermal Annealing (DETA) techniques in the low-temperature plasma-assisted MBE of thick Al x Ga 1− x N layers with the medium Al content ( x =0.4–0.6) grown under the highly metal-rich conditions. Atomically smooth surface with RMS of about 0.4 nm across the area of 2×2 µm 2 has been achieved for AlGaN layers grown at F III / F N flux ratio of 2.5 and substrate temperature of 700 °C by using DETA. The MME growth of AlGaN epilayers leads to their cracking due to the tensile stress introduced by relaxed GaN interlayers which are formed during the nitrogen exposure of the Ga-enriched AlGaN surface. A new technique based on IR-pyrometry measurements has been developed to monitor in situ metal accumulation and depletion on the growth surface.

Sulfide passivation has been used to reduce the surface nonradiative recombination rate in micro- disk mesas based on (AlGaIn)As/GaAS heterostructures the active region of which is constituted either by ten GaAs/AlAs quantum wells or by a sheet of InAs/In0.15Ga0.85As quantum dots. It is shown that passivation leads to a substantial rise in the photoluminescence intensity for mesa structures of all types.

The thermal resistance of AlGaAs/GaAs microlasers of the suspended-disk type with a diameter of 1.7–4 μm and InAs/InGaAs quantum dots in the active region is inversely proportional to the squared diameter of the microdisk. The proportionality factor is 3.2 × 10−3 (K cm2)/W, and the thermal resistance is 120–20°C/mW.

We present a method for determining the diffusion lengths of Ga adatoms on GaN by combining profiling of the tops of GaN stripes obtained by selective area MOCVD and a diffusion growth model. We deduce very high values of the diffusion lengths on tops of -oriented stripes at 1040 °C which range from 6 μm under nitrogen-rich to 24 μm under hydrogen-rich atmosphere in the reactor. The obtained results show in particular that Ga-catalyzed growth of GaN nanostructures and nanowires should not be limited by Ga influx and thus the exceptional growth rate is anticipated in such cases.

In this work we report, to the best of our knowledge, the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD on silicon with an intermediate MBE-grown Ge buffer. Microlasers with an InGaAs/GaAs quantum well active region were tested at room temperature. Under pulsed injection, lasing is achieved in microlasers with diameters of 23, 27, and 31 µm with a minimal threshold current density of 28 kA/cm2. Lasing spectrum is predominantly single-mode with a dominant mode linewidth as narrow as 35 pm.

The ability to create metamorphic hybrid heterostructure of 1300 nm spectral band VCSEL is demonstrated. Metamorphic semiconductor part of heterostructure with GaAs/AlGaAs DBR and InAlGaAs/InGaAs QW active region has been grown by molecular beam epitaxy (MBE) on GaAs (100). Top dielectric SiO2/Ta2O5 DBR is made by the magnetron sputtering method. VCSEL has been studied under optical pumping (λ = 532 nm, diameter of the focused laser beam of ~ 1 μm) by using micro-PL setup in the range of optical pump power 0 – 70 mW at room temperature. Presence of the superlinear PL intensity growth having threshold-like dependence of PL integral intensity together with the PL peaks narrowing and mode composition modification with the pumping density increasing could be attributed to lasing behavior of the structure. Obtained results indicate the opportunity to use metamorphic growth on GaAs substrates for the 1300 nm range VCSEL manufacturing.

Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs have the nano-pan-cake shape with the height of similar to 2 nm, the lateral size of 20-50 nm, and the density of similar to 5-10(9) cm(-2). Their emission observed at similar to 940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having the diameter of similar to 3.2 lm and providing a free spectral range of similar to 27 nm and quality factors up to Q similar to 13 000. Threshold of similar to 50 W/cm(2Y) and spontaneous emission coupling coefficient of similar to 0.2 were measured for this MD-QD system. Published by AIP Publishing.

Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector (DBR) for the 850 nm spectral region are fabricated. The suggested design provides stable single-mode generation in the entire range of working currents, limited by overheating of the active region. Devices with intracavity contacts and a comparatively large current-aperture diameter (5–6 μm) exhibit single-mode lasing at a wavelength of 840–845 nm in the continuous-wave mode at room temperature with threshold currents of 1.2–1.3 mA, a differential efficiency of 0.5–0.55 mW mA−1, and anoutput power of up to 2 mW.

The possibility of epitaxial growth of nanowire arrays on tilted faces of linear mesa has been demonstrated. The structural properties of GaAs nanowires grown on ( $33\bar 1$ ), ( $11\bar 7$ ), and (113) faces of samples with the (100) crystallographic orientation of the substrate have been studied. It has been found that there is a relation between the structural parameters of nanowires and the geometric orientation of the growth surface relative to the 〈111〉 directions and the surface of the substrate.

The influence of the carrier gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN in stripe windows oriented along the crystallographic direction 〈 $\bar 1$ 100〉 GaN for various widths of the mask between the stripes is studied. It is shown that the addition of nitrogen in the reactor atmosphere leads to changes in the form of the stripes in the case of wide (40 μm) mask from a rectangular form restricted by a {1 $\bar 1$ 20} lateral face to a trapezoidal form restricted by a {1 $\bar 1$ 22} lateral face. It is also shown that during growth in the nitrogen-hydrogen mixture, the gallium flow starts to considerably affect the form of the growing stripes. It is shown that the process is significantly unstable, which leads to a noticeable variation in the form type as the transverse section of the stripe increases.

In this study we investigate the possibility of a-GaN ELOG process and its peculiarities for stripes of various orientations. It is shown that stripe orientation allows governing such important parameters of ELOG-process as lateral growth rate, voids high, fast growth direction. The intermediate orientations of stripe windows (differ from conventional (0001) and (1–100)) can be effectively used for double-cross ELOG process. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

In this paper we obtained GaN and InGaN nanowires on AlN/Si (111) templates via pulsed Metal Organic Chemical Vapour Deposition (MOCVD). The growth modes were investigated, in which selective growth is possible. The impact of NH3 flow and TMG flow and exposure time were investigated. Also the possibility of using indium catalyst was studied. It was shown that In can be used in Au-In melt and as self-suffisient catalyst. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

A nondestructive method for measuring the thicknesses of epitaxial layers of Al x In1 − x Sb alloys based on interference effects in reflectance spectra measured in a wide wavelength range (1–28 μm) is implemented. The studied 0.9–3.3 μm thick Al x In1 − x Sb layers are grown on highly lattice-mismatched GaAs substrates by molecular beam epitaxy. The found thicknesses are in good agreement with the independent data of scanning electron microscopy. The spectral dependence of the refractive index n(E) of Al x In1 − x Sb layers is measured both for the regions of transparency and fundamental absorption. The refractive index for the case of E < E 0 was calculated by a double-oscillator model using a refined experimental dependence of the band gap on the composition E 0(x). The experimental data on the n(E) of Al x In1 − x Sb for energies E > E 0 are found based on the interference pattern.

Vertical-cavity surface-emitting lasers (VCSELs) are low-cost high-performance light sources for high-speed data communication systems, optical interconnects and different sensors [1]. New VCSEL applications (spectroscopy, compact atomic clock) require single-mode operation with stable linear polarization combined with high temperature stability. While conventional GaAs-based VCSELs with small selectively-oxidized current apertures demonstrate stable fundamental transverse mode operation they have unstable polarization due to cylindrical symmetry and isotropic gain. Currently the most popular method for VCSEL polarization control is based on precise etching of sub-wavelength grating in output distributed Bragg reflector [2]. Drawbacks of this approach are relatively complicated fabrication technology and limited output power. In this work we discuss alternative approach for single-mode polarization-stable VCSELs based on rhomboidal selectively-oxidized current aperture combined with intracavity contacts.

In this work, electrically-injected microdisk lasers with diameter varied from 15 to 31μm based on an InAs/InGaAs QD active region have been fabricated and tested in continuous wave regime. At room temperature, lasing is achieved at wavelength around 1.26…1.27 μm with threshold current density about 900 A/cm 2 . Specific series resistance is estimated to be about 10 -4 Ohm•cm 2 . The lasers were tested at elevated temperatures. Lasing is achieved up to 100°C with threshold current of 13.8mA and lasing wavelength of 1304nm in device with 31μm diameter. To the best of our knowledge, this is the highest CW lasing temperature and the longest lasing wavelength ever reported for injection QD microdisk/microring lasers on GaAs substrates. Emission spectrum demonstrates single-mode lasing with side mode suppression ration of 24dB and dominant mode linewidth of 35pm. The far field radiation pattern demonstrates two narrow maxima off the disk plane. A combination of device characteristics achieved (low threshold, long wavelength, operation at elevated temperatures) makes them suitable for application in future optoelectronic circuits for optical interconnect systems.

Low-temperature (

Lasing at a wavelength of >1.3 μm has been achieved at temperatures of up to 380 K in a ring microlaser (diameter of 6 μm) with an active region based on InAs/InGaAs quantum dots.

Results of a comparative study of the structural parameters and the static and dynamic characteristics of vertical-cavity surface-emitting lasers (VCSELs) with microresonators based on Al0.15Ga0.85As and Al0.8Ga0.2As are presented. It is established that the vertical oxidation of layers in the Al0.8Ga0.2As microresonator during formation of the current aperture leads to a significant increase in the oxide thickness. This leads to a considerable decrease in parasitic capacitance of the device and a 1.7- to 2-fold growth in the cut-off frequency of a low-frequency filter formed by parasitic elements of the equivalent electric scheme of the device.

Specific features of gallium nitride (GaN) selective growth by MOVPE in round windows has been studied. It is established that a decrease in the flux of ammonia results in an increase in the lateral size of crystallites, while the minimum studied fluxes lead to a decrease in the height of crystallites and the formation of (0001) and $\left\{ {1\bar 100} \right\}$ facets in addition to the usual $\left\{ {1\bar 101} \right\}$ facets. The phenomenon of growth suppression was observed for a fraction of crystallites at the onset of their coalescence. In addition, selective growth was suppressed near large nonmasked surface regions.

Comparative study of growth kinetics of the Al x Ga 1-x N (x=0-1) layers grown by plasma-assisted molecular beam epitaxy (PA MBE) under different growth conditions (group III to activated nitrogen and Al to Ga flux ratios) is presented. The strong influence of elastic stress on the surface morphology, growth rate and Al content in Al x Ga 1 -x N (x= 0-1) layers is most pronounced for the Al x Ga 1- x N films with high Al-content grown atop of the 2D-AlN buffer layer at near the unity flux ratio F III /F N ~1. The use of strong Ga-rich growth conditions with F III /F N ~ 1.6-2 for the growth of Al x Ga 1- x N/2D-AlN with high Al-content (x > 0.25) allows one to reduce the strain effect as well as provide smooth surface morphology and precise control of Al content in the Al x Ga 1-x N (x=0-1) layers by employing a simple ratio x=F Al F N .

The possibilities of a new method of growing gallium nitride nano- and microwire crystals using continuous titanium films with a thickness of 10–30 nm during growth are described. It is shown that this method can provide growth of high-quality GaN nanowire crystals at an extremely high rate of about 10 μm/min.

Structural and optical properties of InAlN/GaN distributed Bragg reflectors grown by MOCVD on sapphire substrates are studied. The influence of growth conditions and thicknesses of the InAlN layers on structural properties of distributed Bragg reflectors is studied. It is shown that optimization of the conditions of epitaxial growth makes it possible to design InAlN/GaN distributed Bragg reflectors with a reflectance of more than 99% and a reflection maximum in the wavelength range of 460-610 nm.

The paper describes experimental study of stress relaxation and generation in (1-2)-μm-thick GaN and AlGaN layers grown on AlN/c-Al2O3 buffer layers by low temperature (

We demonstrate a Schottky ultraviolet photodiode (UV-PD) and a UV light-emitting diode (UV-LED) based on AlGaN heterostructures grown by plasma-assisted molecular beam epitaxy. The spectral responsivity of the Schottky UV-PD is 3 mA/W at 271 nm at zero bias and decreases by two orders of magnitude for the spectral range of longer wavelengths ( > 300 nm). The sub-monolayer digital alloying technique was used for growing the AlGaN quantum wells in UV-LEDs emitting a single electroluminescence peak at 273 nm.

The effectiveness of magnetron-sputtering deposition in an Ar-N2 plasma-forming mixture as a technique for the fabrication of arrays of GaAs1 − xNx nanowires (NWs) with typical diameters from 10 to 200 nm and lengths up to 3000 nm is demonstrated. Dependence of the growth character of NW on the parameters of the synthesis process, such as the size of Au droplets, deposition rate, and crystallographic orientation of the surface and the temperature of the substrate, is investigated. Analysis of the dependence of NW height on their diameter demonstrates that growth occurs predominantly by the diffusion mechanism. The nitrogen content is kept stable for growth temperatures in the range 400–500°C, being as high as 2.7%. For the substrate temperatures in the range 530–600°C, an abrupt drop in the nitrogen content in the alloy takes place. In the photoluminescence (PL) spectra of the samples obtained, a red shift of the emission band is observed, which is related to an increase in the nitrogen content. The growth-temperature dependence of the position of the luminescence band and the nitrogen content is determined. It is found that the PL intensity of samples with GaAsN NWs containing 2.7% nitrogen increases by a factor of 5–10 as compared to samples with planar layers, which is explained by the absence of structural defects in NWs.

A light-emitting diode (LED) structure based on group III nitride has been grown for the first time on Si(111) substrate with SiC buffer nanolayer (50- to 200-nm-thick) obtained by solid-phase epitaxy. This LED structure is characterized by record low (