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Studies the growth and characterizations of galliumnitride on silicon carbide substrates with buffer layers. Enhanced electron mobility; Hall measurement and sheet carrier density; Bulk carrier density and lattice constants.

In this paper, we demonstrate a new bottom-antireflective coating (BARC) layer for KrF lithography. The antireflective layer is composed of a commercial low-dielectric constant FLARE 2.0-based film. By adding an optimized etching hard-mask layer, reflectance of less than 3% at the resist/silicon substrate interface can be achieved. FLARE 2.0 films also have great potential to be used as BARC layers on highly reflective substrates for metal interconnect applications. It is easy to reduce reflectance without adding an extra BARC layer for patterning low-dielectric materials. It is convenient to use this novel BARC structure in KrF lithography. In this paper, suitable etching characteristics of FLARE 2.0-based BARC layers are also described. [Copyright &y& Elsevier]

Presents a study which monitored changes in body mass, length of forearm and length of total epiphyseal gaps of young Formosan leaf-nosed bats or Hipposideros terasensis by marking and recapturing at a maternity colony in central Taiwan. Pattern of postnatal growth under natural conditions; Trend in changes in body mass and length of forearm; Age of sexual maturity of both males and females; Comparison of growth constant and age of sexual maturity with other bats.

Describes the growth and characterization of two-dimensional electron gas mobility in a stair-step type of aluminum gallium nitride/gallium nitride heterostructures. Components of the structure; Calculation of sheet carrier density and mobility for the heterostructure; Factors affecting the electron mobility.

Investigates the formation of p[sub +]n junctions by ion implantation and laser annealing. Presentation of the implants and anneal regimes; Effect of rapid thermal annealing on boron implanted silicon pre-amorphized samples; Role of laser annealing in dopant activation and anomalous diffusion suppression.

Describes the fabrication of titanium (Ti)-silicided shallow n[sup +]p junction by phosphorus ion implantation in amorphous-silicon/Ti bilayer thin film. Application of rapid thermal annealing with post-conventional furnace annealing treatment; Facilitation of silicidation and damage annihilation; Crystallization of titanium silicide.

Abstract: We demonstrated a new imprint method named nanoimprinting in metal/polymer bi-layer structures (NIMB) for patterning metal films with varied profiles. Converse with conventional nanoimprint lithography, the patterned mold is directly imprint in metal films not in polymer based resists. In general, direct imprint in metal films need ultra-high pressure or temperature to form patterns. In this paper, we improve the direct imprint processes by using a sharp mold and an underlying soft pad layer for the reduction of the imprint pressure and temperature. The imprint pressure can be reduced to be compatible with the conventional nanoimprint instrument. For the direct contact the metal film with mold, no surfactant should be coated on the surface of mold. It also indicates no mold-rework-processes are necessary for this direct imprint method. [Copyright &y& Elsevier]

Abstract: Excellent ultra-shallow p+n junctions have been formed by thermally treating the BF2 +-implanted Si samples by excimer laser annealing (ELA) at 300–400mJcm−2 with post low-temperature long-time furnace annealing (FA) at 600°C. A junction with a leakage current density lower than 20nAcm−2 and a sheet resistance smaller than 200Ω□−1 can be well achieved. No considerable dopant diffusion is observed by using this low-thermal-budget annealing process. However, by simply using the ELA treatment at 300–400mJcm−2, the resultant junction shows a leakage current density as high as 104 nAcm−2 and a peripheral leakage current density of 103 nAcm−1. The large junction leakage is primarily due to the leakage current generated within the junction region near the local-oxidation-of-silicon (LOCOS) edge, and which is substantially caused by the ELA treatment. The large peripheral junction leakage current density can be significantly reduced to be about 0.2nAcm−1 after a post low-temperature FA treatment at 600°C. As a result, the scheme that employs ELA treatment with post low-temperature FA treatment would be efficient for forming excellent ultra-shallow p+n junctions at low thermal budget. [Copyright &y& Elsevier]

Fabrication of trench-gate power MOSFETs by using a dual doped body region has been proposed to further improve the device performance. For the usual scheme that employs a uniform doped body region, a device with a blocking voltage larger than 30 V and a specific on-state resistance of about 1.0 Ω cm can be obtained via the proper choice of trench depth, epitaxial thickness, and body doping concentration. On the other hand, a dual doped body region is produced by dual high-energy and low-energy implantation of boron dopant. By this scheme, a device with a blocking voltage larger than 30 V and a specific on-state resistance of about 0.8 Ω cm can be further achieved. Hence, with reducing the cell pitch size to be below 2 μm, this device fabrication scheme should be promising and practical for achieving a specific on-resistance smaller than 0.1 mΩ cm2 and a blocking voltage higher than 30 V. [Copyright &y& Elsevier]

The instability mechanisms of passivated and non-passivated low-temperature polycrystalline silicon thin film transistors (LTPS TFTs) under various bias stress conditions have been investigated. Irrespective of plasma treatment, the degradation was more severe under negative gate bias stress than that under positive gate bias stress. This could be due to Fowler–Nordheim tunneling electron induced impact ionization. For hot carrier stress, TFTs with NH3 plasma treatment degraded more severely than those without plasma treatment. This might be attributed to collapsing of weak Si–H bonds in NH3-plasma passivated devices. For the high current stress, it showed the opposite results against hot carrier stress. [Copyright &y& Elsevier]

Details the formation of shallow p[sup +]n junctions by implanting BF[sup +][sub 2] ions into thin polycrystalline silicon films and subsequent annealing. Occurrence of an anomalous boron diffusion; Effect of silicidation on the junction profile; Factor attributed for the large boron redistribution.

We report on the preparation and field emission properties of quasi-aligned silicon carbon nitride (SiCN) nanorods. The SiCN nanorods are formed by using a two-stage growth method wherein the first stage involves formation of a buffer layer containing high density of nanocrystals by electron cyclotron resonance plasma enhanced chemical vapor deposition and the second stage involves using microwave plasma enhanced chemical vapor deposition for high growth rate along a preferred orientation. It should be noted that growth of the SiCN nanorods is self-mediated without the addition of any metal catalyst. Scanning electron microscopy shows that the SiCN nanorods are six-side-rod-shaped single crystals of about 1-1.5 μm in length and about 20-50 nm in diameter. Energy dispersive x-ray spectrometry shows that the nanorod contains about 26 at. % of Si, 50 at. % of C, and 24 at. % of N. Characteristic current-voltage measurements indicate a low turn-on field of 10 V/μm. Field emission current density in excess of 4.5 mA/cm[sup 2] has been observed at 36.7 V/μm. Moreover, SiCN nanorods exhibited rather stable emission current under constant applied voltage. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]