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Fabrication of trench-gate power MOSFETs by using a dual doped body region
- Source :
-
Solid-State Electronics . Jul2004, Vol. 48 Issue 7, p1079. 7p. - Publication Year :
- 2004
-
Abstract
- Fabrication of trench-gate power MOSFETs by using a dual doped body region has been proposed to further improve the device performance. For the usual scheme that employs a uniform doped body region, a device with a blocking voltage larger than 30 V and a specific on-state resistance of about 1.0 Ω cm can be obtained via the proper choice of trench depth, epitaxial thickness, and body doping concentration. On the other hand, a dual doped body region is produced by dual high-energy and low-energy implantation of boron dopant. By this scheme, a device with a blocking voltage larger than 30 V and a specific on-state resistance of about 0.8 Ω cm can be further achieved. Hence, with reducing the cell pitch size to be below 2 μm, this device fabrication scheme should be promising and practical for achieving a specific on-resistance smaller than 0.1 mΩ cm2 and a blocking voltage higher than 30 V. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 48
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 12775638
- Full Text :
- https://doi.org/10.1016/j.sse.2003.07.007