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The process limitation for forming Ti silicided shallow junction by BF[sup +, sub 2]....
- Source :
-
Applied Physics Letters . 8/30/1993, Vol. 63 Issue 9, p1267. 3p. 1 Chart, 2 Graphs. - Publication Year :
- 1993
-
Abstract
- Details the formation of shallow p[sup +]n junctions by implanting BF[sup +][sub 2] ions into thin polycrystalline silicon films and subsequent annealing. Occurrence of an anomalous boron diffusion; Effect of silicidation on the junction profile; Factor attributed for the large boron redistribution.
- Subjects :
- *SEMICONDUCTOR junctions
*ION implantation
*THIN films
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 63
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4294143
- Full Text :
- https://doi.org/10.1063/1.109753