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Formation of p[sup +]n junctions by Si[sup +]+B[sup +] implantation and laser annealing.
- Source :
-
Applied Physics Letters . 4/27/1992, Vol. 60 Issue 17, p2092. 3p. 3 Graphs. - Publication Year :
- 1992
-
Abstract
- Investigates the formation of p[sub +]n junctions by ion implantation and laser annealing. Presentation of the implants and anneal regimes; Effect of rapid thermal annealing on boron implanted silicon pre-amorphized samples; Role of laser annealing in dopant activation and anomalous diffusion suppression.
- Subjects :
- *SEMICONDUCTOR junctions
*ION implantation
*ANNEALING of crystals
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 60
- Issue :
- 17
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4232836
- Full Text :
- https://doi.org/10.1063/1.107099