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Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures.
- Source :
-
Applied Physics Letters . 5/12/1997, Vol. 70 Issue 19, p2583. 3p. 1 Diagram, 1 Chart, 2 Graphs. - Publication Year :
- 1997
-
Abstract
- Describes the growth and characterization of two-dimensional electron gas mobility in a stair-step type of aluminum gallium nitride/gallium nitride heterostructures. Components of the structure; Calculation of sheet carrier density and mobility for the heterostructure; Factors affecting the electron mobility.
- Subjects :
- *ELECTRON mobility
*ELECTRON gas
*GALLIUM nitride
*HETEROSTRUCTURES
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 70
- Issue :
- 19
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4199188
- Full Text :
- https://doi.org/10.1063/1.118940