Back to Search
Start Over
Novel annealing scheme for fabricating high-quality Ti-silicided shallow n[sup +]p junction by....
- Source :
-
Applied Physics Letters . 3/30/1992, Vol. 60 Issue 13, p1579. 3p. 3 Graphs. - Publication Year :
- 1992
-
Abstract
- Describes the fabrication of titanium (Ti)-silicided shallow n[sup +]p junction by phosphorus ion implantation in amorphous-silicon/Ti bilayer thin film. Application of rapid thermal annealing with post-conventional furnace annealing treatment; Facilitation of silicidation and damage annihilation; Crystallization of titanium silicide.
- Subjects :
- *SEMICONDUCTOR junctions
*ION implantation
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 60
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4266339
- Full Text :
- https://doi.org/10.1063/1.107257