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Growth and characterizations of GaN on SiC substrates with buffer layers.
- Source :
-
Journal of Applied Physics . 9/1/1997, Vol. 82 Issue 5, p2378. 5p. 1 Diagram, 2 Charts, 8 Graphs. - Publication Year :
- 1997
-
Abstract
- Studies the growth and characterizations of galliumnitride on silicon carbide substrates with buffer layers. Enhanced electron mobility; Hall measurement and sheet carrier density; Bulk carrier density and lattice constants.
- Subjects :
- *GALLIUM nitride
*SILICON carbide
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 82
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 98940
- Full Text :
- https://doi.org/10.1063/1.366048