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Growth and characterizations of GaN on SiC substrates with buffer layers.

Authors :
Lin, C.F.
Cheng, H.C.
Chi, G. C.
Feng, M. S.
Guo, J. D.
Minghuang Hong, J.
Chen, C. Y.
Source :
Journal of Applied Physics. 9/1/1997, Vol. 82 Issue 5, p2378. 5p. 1 Diagram, 2 Charts, 8 Graphs.
Publication Year :
1997

Abstract

Studies the growth and characterizations of galliumnitride on silicon carbide substrates with buffer layers. Enhanced electron mobility; Hall measurement and sheet carrier density; Bulk carrier density and lattice constants.

Subjects

Subjects :
*GALLIUM nitride
*SILICON carbide

Details

Language :
English
ISSN :
00218979
Volume :
82
Issue :
5
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
98940
Full Text :
https://doi.org/10.1063/1.366048
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