Cite
Growth and characterizations of GaN on SiC substrates with buffer layers.
MLA
Lin, C. F., et al. “Growth and Characterizations of GaN on SiC Substrates with Buffer Layers.” Journal of Applied Physics, vol. 82, no. 5, Sept. 1997, p. 2378. EBSCOhost, https://doi.org/10.1063/1.366048.
APA
Lin, C. F., Cheng, H. C., Chi, G. C., Feng, M. S., Guo, J. D., Minghuang Hong, J., & Chen, C. Y. (1997). Growth and characterizations of GaN on SiC substrates with buffer layers. Journal of Applied Physics, 82(5), 2378. https://doi.org/10.1063/1.366048
Chicago
Lin, C.F., H.C. Cheng, G. C. Chi, M. S. Feng, J. D. Guo, J. Minghuang Hong, and C. Y. Chen. 1997. “Growth and Characterizations of GaN on SiC Substrates with Buffer Layers.” Journal of Applied Physics 82 (5): 2378. doi:10.1063/1.366048.