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33 results on '"Moiseev, K. D."'

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1. Discovery of III–V Semiconductors: Physical Properties and Application.

2. Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate.

3. Type II broken-gap GaSb1 − x As x/InAs heterojunction ( x < 0.15): Evolution of the band diagram for the ternary solid solution.

4. Magneto-photoluminescence in a type-II broken-gap n-GaInAsSb/ p-InAs heterojunction.

5. InSb/InAs quantum dots grown by liquid phase epitaxy.

6. Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system.

7. Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy.

8. Photoluminescence of Ga[sub 1 – ][sub x]In[sub x]As[sub y]Sb[sub 1 – ][sub y] Solid Solutions Lattice-Matched to InAs.

9. Type II Broken-Gap InAs/GaIn[sub 0.17]As[sub 0.22]Sb Heterostructures with Abrupt Planar Interface.

10. Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure.

11. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions.

12. Superluminescence in an AlGaAsSb/InGaAsSb/AlGaAsSb double heterostructure.

13. Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics.

14. Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement.

15. The Influence of the Crystal Structure of the GaSb–InAs Matrix on the Formation of InSb Quantum Dots.

16. Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/ p( n)-GaSb type II heterostructures with deep quantum wells at the interface.

17. Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it.

18. Scanning electron microscopy of long-wavelength laser structures.

19. Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction.

20. Long-Wavelength LEDs in the Atmospheric Transparency Window of 4.6–5.3 μm.

21. Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb.

22. Ultimate InAsSbP Solid Solutions for 2.6–2.8-μm LEDs.

23. Photodiodes for a 1.5–4.8μm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures.

24. Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties.

25. Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3μm.

26. Magnetotransport in a Semimetal Channel in p-Ga[sub 1 – ][sub x]In[sub x]As[sub y]Sb[sub 1 – ][sub y] / p-InAs Heterostructures with Various Compositions of the Solid Solution.

27. Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions.

28. Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs.

29. Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution.

30. Solid solution In[sub x]Ga[sub 1-x]As[sub y]Sb[sub z]P[sub 1-y-z]: A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy.

31. Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures.

32. Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation.

33. Properties of the electron channel in single GaInAsSb/p-InAs heterostructures.

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