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Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions.
- Source :
-
Technical Physics Letters . Jun98, Vol. 24 Issue 6, p477. 3p. - Publication Year :
- 1998
-
Abstract
- The electroluminescent properties of quantum-well diode structures on staggered type-II heterojunctions in the InAs/GaSb system, obtained by molecular-beam epitaxy on InAs substrates, are investigated. Electroluminescence is observed in the spectral range 3-4 µm at T = 77 K. It is found that emission bands due to recombination transitions involving electrons from the size-quantization levels of both the self-matched quantum wells at the InAs/GaSb type-II heterojunction and of the square quantum wells in short-period superlattices. [ABSTRACT FROM AUTHOR]
- Subjects :
- *QUANTUM wells
*DIODES
Subjects
Details
- Language :
- English
- ISSN :
- 10637850
- Volume :
- 24
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Technical Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 7326539
- Full Text :
- https://doi.org/10.1134/1.1262152