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Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement.
- Source :
-
Semiconductors . May2023, Vol. 57 Issue 5, p263-267. 5p. - Publication Year :
- 2023
-
Abstract
- The electroluminescent characteristics of the InAs/InAs1–ySby/InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region (y > 0.09) in the temperature range 4.2–300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1–4.2 μm at low temperatures (T < 30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 57
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 176033053
- Full Text :
- https://doi.org/10.1134/S1063782623070163