Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs.

Magnetotransport and the electron channel parameters are investigated in p-GaInAsSb/p-InAs heterojunctions as functions of the acceptor doping level of the quaternary (GaInAsSb) layer. An abrupt decrease in the carrier mobility with increased doping level in these heterojunctions is observed. This decrease can be attributed to the narrowing and depletion of the channel near the interface and strong localization of electrons in potential wells at the interface. [ABSTRACT FROM AUTHOR]