Properties of the electron channel in single GaInAsSb/p-InAs heterostructures.

An investigation is carried out on the properties of the electron channel in a broken-gap isotypic type II GaInAsSb/p-InAs heterostructure and their dependence on the doping level of the quaternary solid solution with a donor (Te) and an acceptor (Zn). The Hall mobility decreases (by more than two orders of magnitude) with increasing acceptor concentration. The Shubnikov-de Haas oscillations are observed at low temperatures (T = 1.5-20 K) and the electron effective mass is determined (m[sub n] = 0.026m[sub 0]), along with some other parameters of the heterostructure. [ABSTRACT FROM AUTHOR]