Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy.

Authors :: Ivanov, S. V.
Moiseev, K. D.
Kaıgorodov, V. A.
Solov’ev, V. A.
Sorokin, S. V.
Meltser, B. Ya.
Grebenshchikova, E. A.
Sedova, I. V.
Terent’ev, Ya. V.
Semenov, A. N.
Astakhova, A. P.
Mikhaılova, M. P.
Toropov, A. A.
Yakovlev, Yu. P.
Kop’ev, P. S.
Alferov, Zh. I.
Source :: Semiconductors. Jun2003, Vol. 37 Issue 6, p736. 4p.
Publication Year :: 2003
Abstract: The lasing of an injection-pumped p-AlGaAsSb/n[SUP0]-InAs/n-CdMgSe double hybrid heterostructure in the mid-IR range is demonstrated for the first time. The lasing wavelength λ is 2.775 μm, and the threshold current density J[SUBth] = 3-4 kA/cm[SUP2] at T = 77 K. The structure grown by two-stage molecular-beam epitaxy is characterized by extremely high (∼1.5 eV) asymmetric potential barriers for electrons and holes in the InAs active region. The output power of spontaneous emission for round-mesa diodes atT = 300 K was no less than 0.3 mW. [ABSTRACT FROM AUTHOR]

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