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Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction.
- Source :
-
Semiconductors . Mar2021, Vol. 55 Issue 3, p354-358. 5p. - Publication Year :
- 2021
-
Abstract
- A study of the electroluminescence of asymmetric InAs/InAs1 – ySby/InAsSbP light-emitting diode heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y = 0.15 and y = 0.16 in the temperature range 4.2–300 K is reported. It is found on the basis of experimental data that a staggered type-II heterojunction is formed at the InAs1 – ySby/InAs0.41Sb0.28P0.40 heterointerface. It is shown that interfacial radiative transitions at the type-II heterointerface make a dominant contribution in the temperature range of 4.2–180 K. This enables minimization of the temperature dependence of the operating wavelength of a light-emitting diode. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 55
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 149649588
- Full Text :
- https://doi.org/10.1134/S1063782621030155